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CDP1821CD3R1783

Part No :

CDP1821CD3R1783

Manufacturer
Rochester Electronics
Description
HIGH-RELIABILITY CMOS 1024-WORD
Catalog
Memory
DataSheet
CDP1821CD3R1783 PDF
Unit Price
詢價(jià)QQ咨詢
Stock Num
14061
Min Qty
11
Package
Bulk

CDP1821CD3R1783 Specifications

Type Description
rohs: RoHS
technology: SRAM - Asynchronous
access time: 255 ns
memory size: 1Kb (1K x 1)
memory type: Volatile
part status: Active
memory format: SRAM
mounting type: Through Hole
package / case: 16-CDIP (0.300", 7.62mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4V ~ 6.5V
operating temperature: -55°C ~ 125°C (TA)
supplier device package: 16-SBDIP
write cycle time - word, page: 420ns